dual p-channel high density trench mosfet - 1 - www.matrix-microtech.com.tw ver 1.01 6/2/2009. MT4953 ? description the MT4953 uses advanced technology to provide exce llent rds(on), low switching loss and reasonable price. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. ? features ? -30v/-4.9a, r ds(on) = 65m ? @ v gs = -10v ? -30v/-3.6a, r ds(on) = 105m ? @ v gs = -4.5v ? super high dense cell trench design for low r ds(on) ? rugged and reliable ? sop-8 package design ? applications ? power management in note ? portable equipment ? battery powered system ? dc/dc converter ? lcd display ? pin configuration www.datasheet.co.kr datasheet pdf - http://www..net/
dual p-channel high density trench mosfet - 2 - www.matrix-microtech.com.tw ver 1.01 6/2/2009. MT4953 ? absolute maximum ratings (t a =25 o c unless otherwise noted) parameter symbol maximum unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v continuous (1) i d -4.9 drain current pulse (2) i dm -20 a drain-source diode forward current (1) i s -1.7 a maximum power dissipation (1) p d 2.0 w operating junction temperature range t j 150 o c storage temperature range t stg - 55 to 150 o c ? thermal resistance ratings thermal resistance symbol maximum unit junction-to-ambient r ja 78 o c/w note : 1. surface mounted on fr4 board , t 10sec 2. pulse test pulse width 300us , duty cycle 2% www.datasheet.co.kr datasheet pdf - http://www..net/
dual p-channel high density trench mosfet - 3 - www.matrix-microtech.com.tw ver 1.01 6/2/2009. MT4953 ? electrical characteristics (t a =25 o c unless otherwise noted) parameter symbol test conditions min. typ. max. unit off characteristics drain-source breakdown voltage bv dss v gs = 0v, i d = -250 a -30 - - v zero gate voltage drain current i dss v ds = -24v, v gs = 0 v - - -1 a gate-body leakage i gss v ds = 0v, v gs = 20v, - - 100 na on characteristics (1) gate threshold voltage v gs(th) v gs = v ds , i d = -250 a -1.2 -1.8 -2.4 v v gs = -10v, i d = -4.9a - 42 65 drain-source on state resistance r ds(on) v gs = -4.5v, i d = -3.6a - 67 105 m ? drain-source diode characteristics (1) diode forward voltage v sd i s = -1.0a, v gs = 0v - - -1.0 v dynamic parameters (2) input cap. c iss - 970 - output cap. c oss - 170 - reverse transfer cap. c rss v ds = -15v, v gs = 0v f = 1mhz - 120 - pf switching parameters (2) v d s = -15v, v gs = -10v, i d = -1a - 18.20 - total gate charge q g v d s = -15v, v gs = -4.5v, i d = -1a 9.20 - gate-source charge q gs - 2.64 - gate-drain charge q gd v d s = -15v, v gs = -10v, i d = -1a - 3.52 - nc t d(on) - 5.36 - turn-on time t r - 7.76 - t d(off) - 15.84 - turn-off time t f v ds = -15v, r l = 15 ? i d = -1a, v gen = -10v, r g =10 ? - 9.84 - ns note : 1. pulse test pulse width 300us , duty cycle 2% 2. guaranteed by design, not subject to production testing www.datasheet.co.kr datasheet pdf - http://www..net/
dual p-channel high density trench mosfet - 4 - www.matrix-microtech.com.tw ver 1.01 6/2/2009. MT4953 ? typical characterictics www.datasheet.co.kr datasheet pdf - http://www..net/
dual p-channel high density trench mosfet - 5 - www.matrix-microtech.com.tw ver 1.01 6/2/2009. MT4953 ? typical characterictics www.datasheet.co.kr datasheet pdf - http://www..net/
dual p-channel high density trench mosfet - 6 - www.matrix-microtech.com.tw ver 1.01 6/2/2009. MT4953 ? physical dimensions 8-pin plastic s.o.i.c. www.datasheet.co.kr datasheet pdf - http://www..net/
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